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| ILD621/621GB QUAD CHANNEL ILQ621/621GB DUAL CHANNEL MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES * Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 * Current Transfer Ratio (CTR) at IF= 5 mA ILD/Q621: 50% Min. ILD/Q621GB: 100% Min. * Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min. * High Collector-Emitter Voltage, BVCEO=70 V * Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Isolation Test Voltage from Double Molded Package, 5300 VACRMS * Underwriters Lab File #E52744 * VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage .................................................6 V Forward Current ...........................................60 mA Surge Current .................................................1.5 A Power Dissipation.......................................100 mW Derate from 25C ................................1.33 mW/C Detector Collector-Emitter Reverse Voltage ...................70 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)..........................100 mA Power Dissipation.......................................150 mW Derate from 25C .................................... -2 mW/C Package Isolation Test Voltage (t=1 sec.) ......................................... 7500 VACPK (t=1 min.) ....................................... 5300 VACRMS Package Dissipation ILD620/GB............... 400 mW Derate from 25C ...............................5.33 mW/C Package Dissipation ILQ620/GB ..............500 mW Derate from 25C ...............................6.67 mW/C Creepage ............................................... 7 mm min. Clearance............................................... 7 min min. Isolation Resistance VIO=500 V, TA=25C ............................... 1012 VIO=500 V, TA=100C ............................. 1011 Storage Temperature................... -55C to +150C Operating Temperature ................-55C to +100C Junction Temperature.................................... 100C Soldering Temperature (2 mm from case bottom) .......................... 260C 4 Typ. .022 (.56) .018 (.46) .790 (20.07) .779 (19.77 ) Dimensions in inches (mm) 4 3 2 1 Pin One I.D. .268 (6.81) .255 (6.48) Anode Cathode 5 6 7 8 Cathode Anode 1 2 3 4 8 7 6 5 Emitter Collector Collector Emitter .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) 4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .305 typ. (7.75) typ. 10 Typ. 3-9 .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) .100 (2.54) Typ. Pin One I.D. Anode 1 Cathode 2 Cathode 3 .268 (6.81) .255 (6.48) Anode 4 Anode 5 Cathode 6 Cathode 7 16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 .305 typ. (7.75) typ. Emitter Anode 8 .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 10 Typ. .135 (3.43) .115 (2.92) .100 (2.54) Typ. 3-9 .012 (.30) .008 (.20) DESCRIPTION The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of 30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of 50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present. 5-1 Characteristics Symbol Emitter Forward Voltage Reverse Current Capacitance Thermal Resistance, Junction to Lead Detector Capacitance Collector-Emitter Leakage Current Collector-Emitter Leakage Current Thermal Resistance, Junction to Lead Package Transfer Characteristics Channel/Channel CTR Match ILD/Q621 Saturated Current Transfer Ratio Current Transfer Ratio Collector-Emitter Saturation Voltage ILD/Q621GB Saturated Current Transfer Ratio Current Transfer Ratio (Collector-Emitter) Collector-Emitter Saturation Voltage Isolation and Insulation Common Mode Rejection, Output High Common Mode Rejection, Output Low Common Mode Coupling Capacitance Package Capacitance Insulation Resistance Channel to Channel Insulation CMH CML CCM CI-O RS 0.8 1012 500 5000 5000 0.01 V/s V/s pF pF VAC VIO=0 V, f=1 MHz VIO=500 V, TA=25C VCM=50 VP-P, RL=1 k, IF=0 mA VCM=50 VP-P, RL=1 k, IF=10 mA CTRCEsat CTRCE VCEsat 30 100 200 600 0.4 % % V IF=1 mA, VCE=0.4 V IF=5 mA, VCE=5 V IF=8 mA, ICE=0.2 mA CTRCEsat CTRCE VCEsat 50 60 80 600 0.4 % % V IF=1 mA, VCE=0.4 V IF=5 mA, VCE=5 V IF=8 mA, ICE=2.4 mA CTRX/CTRY 1 to 1 3 to 1 IF=5 mA, VCE=5 V CCE ICEO ICEO RTHJL 6.8 10 2 500 100 50 pF nA A C/W VCE=5 V, f=1 MHz VCE=24 V TA=85C, VCE=24 V VF IR CO RTHJL 1 1.15 0.01 40 750 1.3 10 V A pF C/W IF=10 mA VR=6 V VF=0 V, f=1 MHz Min. Typ. Max. Unit Condition Switching Times Figure 1. Non-saturated switching timing IF IF=10 mA VO F=10 KHz, DF=50 % Figure 2. Non-saturated switching timing VCC=5 V RL=75 tPHL V0 tPLH tS 50% Characteristic On Time Rise Time Off Time Symbol TON tR tOFF tF tPHL tPLH Typ. 3.0 20 2.3 2.0 1.1 2.5 Unit s s s s s s Test Condition IF= 10 mA VCC=5 V RL=75 50% of VPP tD tR tF Fall Time Propagation H-L Propagation L-H ILD/Q621/GB 5-2 Figure 3. Saturated switching timing IF Figure 6. Maximum LED power dissipation 200 PLED - LED Power - mW 150 VO tD tR tPLH VTH=1.5 V tF 100 50 tPHL tS 0 --60 -40 Ta - Ambient Temperature - C -20 0 20 40 60 80 100 Figure 4. Saturated switching timing F=10 KHz, DF=50% VCC=5 V RL VO IF=10 mA Figure 7. Forward voltage versus forward current 1.4 VF - Forward Voltage - V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 Ta = 85C Ta = 25C Ta = -55C Characteristic On Time Rise Time Off Time Fall Time Propagation H-L Propagation L-H Symbol TON tR tOFF tF tPHL tPLH Typ. 4.3 2.8 2.5 11 2.6 7.2 Unit s s s s s s Test Condition IF= 10 mA VCC=5 V RL=1 VTH=1.5 V Figure 8. Collector-emitter current versus temperature and LED current 35 Ice - Collector Current - mA 30 25 20 15 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 25C 85C 70C 50C Figure 5. Maximum LED current versus ambient temperature IF - Maximum LED Current - mA 120 100 80 60 40 20 0 --60 -40 TJ (MAX)=100C Ta - Ambient Temperature - C -20 0 20 40 60 80 100 ILD/Q621/GB 5-3 Figure 9. Collector-emitter leakage versus temperature Iceo - Collector-Emitter - nA 5 10 10 4 10 3 Figure 13. Normalization factor for non-saturated and saturated CTR TA=50C versus If 2.0 Normalized to: Vce = 10V, IF = 5mA, Ta = 25C CTRce(sat) Vce = 0.4V CTRNF - Normalized CTR Factor 1.5 10 2 10 1 Vce = 10V TYPICAL NCTRce 1.0 NCTRce(sat) 0.5 Ta = 50C 0.0 .1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C 1 10 IF - LED Current - mA 100 Figure 10. Propagation delay versus collector load resistor tpLH - Propagation Delay - s tpHL - Propagation Delay - s Figure 14. Normalization factor for non-saturated and saturated CTR TA=70C versus If 2.0 CTRNF - Normalized CTR Factor Normalized to: Vce = 10V, IF = 5mA, Ta = 25C CTRce(sat) Vce = 0.4V 1000 100 Ta = 25C, IF = 10mA Vcc = 5 V,Vth = 1.5 tpHL V 2.5 1.5 2.0 1.0 NCTRce 10 tpLH 1 .1 1.5 NCTRce(sat) Ta = 70C 0.5 1.0 1 10 100 RL - Collector Load Resistor - K 0.0 .1 1 10 IF - LED Current - mA 100 Figure 11. Maximum detector power dissipation 200 P - Detector Power - mW DET Figure 15. Normalization factor for non-saturated and saturated CTR TA=100C versus If 2.0 Normalized to: Vce = 10V, IF = 5mA, Ta = 25C CTRce(sat) Vce = 0.4V 100 CTRNF - Normalized CTR Factor 150 1.5 1.0 NCTRce 50 0.5 NCTRce(sat) Ta = 100C 1 10 IF - LED Current - mA 100 0 -60 -40 -20 0 20 40 60 Ta - Ambient Temperature - C 80 100 0.0 .1 Figure 12. Maximum collector current versus collector voltage 1000 Figure 16. Peak LED current versus pulse duration, Tau 10000 Duty Factor Ice - Collector Current - mA 100 Rth = 500C/W If(pk) - Peak LED Current - mA 1000 .005 .01 .02 .05 .1 .2 t DF = /t 10 1 25C 50C 75C 90C 100 .5 .1 .1 1 10 Vce - Collector-Emitter Voltage - V 100 10 -6 10 10-5 10-4 10-3 10 -2 10-1 10 0 10 1 t - LED Pulse Duration - s ILD/Q621/GB 5-4 |
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